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NAND256W3A2BZA6E +BOM

High-speed data transfer technology

NAND256W3A2BZA6E General Description

The NAND256W3A2BZA6E from Micron Technology is a reliable and high-capacity NAND flash memory chip that is perfect for use in various storage devices. With its 256 gigabit storage capacity and 3D NAND architecture, it is ideal for solid-state drives, memory cards, and other storage solutions requiring large capacity

Specifications

Pbfree Code Yes Part Life Cycle Code Obsolete
Pin Count 55 Reach Compliance Code compliant
ECCN Code EAR99 HTS Code 8542.32.00.51
Access Time-Max 35 ns Command User Interface YES
Data Polling NO JESD-30 Code R-PBGA-B55
JESD-609 Code e1 Length 10 mm
Memory Density 268435456 bit Memory IC Type FLASH
Memory Width 8 Number of Functions 1
Number of Sectors/Size 2K Number of Terminals 55
Number of Words 33554432 words Number of Words Code 32000000
Operating Mode ASYNCHRONOUS Operating Temperature-Max 85 °C
Operating Temperature-Min -40 °C Organization 32MX8
Page Size 512 words Parallel/Serial PARALLEL
Programming Voltage 3 V Qualification Status Not Qualified
Ready/Busy YES Seated Height-Max 1.05 mm
Sector Size 16K Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA Supply Voltage-Max (Vsup) 3.6 V
Supply Voltage-Min (Vsup) 2.7 V Supply Voltage-Nom (Vsup) 3 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish TIN SILVER COPPER
Terminal Form BALL Terminal Pitch 0.8 mm
Terminal Position BOTTOM Toggle Bit NO
Type SLC NAND TYPE Width 8 mm

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