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NAND512R3A2DZA6E +BOM

Ideal for embedded systems, industrial control, and automotive use

NAND512R3A2DZA6E General Description

Featuring a capacity of 512 megabytes and a 3.3 volt power supply, the NAND512R3A2DZA6E from Micron Technology is a NAND Flash memory device organized into memory blocks and pages for efficient data storage. Its synchronous interface with a maximum clock frequency of 50 MHz enables fast data transfer speeds, and it supports features such as random read/write operations, hardware data protection, and error correction codes to ensure data integrity. Designed for use in solid-state drives, smartphones, tablets, and other consumer electronics devices, this device offers reliable performance and durability in high-demand environments. Its ability to provide high-density storage and low power consumption makes it a valuable choice for various applications

Specifications

Part Life Cycle Code Obsolete Pin Count 63
Reach Compliance Code ECCN Code EAR99
HTS Code 8542.32.00.51 Access Time-Max 15000 ns
Command User Interface YES Data Polling NO
JESD-30 Code R-PBGA-B63 JESD-609 Code e1
Length 11 mm Memory Density 536870912 bit
Memory IC Type FLASH Memory Width 8
Number of Functions 1 Number of Sectors/Size 4K
Number of Terminals 63 Number of Words 67108864 words
Number of Words Code 64000000 Operating Mode ASYNCHRONOUS
Operating Temperature-Max 85 °C Operating Temperature-Min -40 °C
Organization 64MX8 Page Size 512 words
Parallel/Serial PARALLEL Peak Reflow Temperature (Cel) 260
Programming Voltage 1.8 V Qualification Status Not Qualified
Ready/Busy YES Seated Height-Max 1.05 mm
Sector Size 16K Standby Current-Max 0.00005 A
Supply Current-Max 0.02 mA Supply Voltage-Max (Vsup) 1.95 V
Supply Voltage-Min (Vsup) 1.7 V Supply Voltage-Nom (Vsup) 1.8 V
Surface Mount YES Technology CMOS
Temperature Grade INDUSTRIAL Terminal Finish Tin/Silver/Copper (Sn/Ag/Cu)
Terminal Form BALL Terminal Pitch 0.8 mm
Terminal Position BOTTOM Time@Peak Reflow Temperature-Max (s) 30
Toggle Bit NO Type SLC NAND TYPE
Width 9 mm

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