This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

NAND512W3A2SNXE +BOM

High-quality SLC NAND Flash memory for reliable data storage

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

NAND512W3A2SNXE
Datasheet:

NAND512W3A2SNXE Datasheet (PDF)
Programmabe:

Not Verified
Memory Type:

Non-Volatile
Memory Format:

FLASH
Technology:

FLASH - NAND
EDA/CAD Models:

Request Free CAD Models for NAND512W3A2SNXE

NAND512W3A2SNXE General Description

When it comes to high-speed, high-capacity storage, the NAND512W3A2SNXE chip stands out as a top choice for those seeking cutting-edge technology and performance. Its use of 3D NAND technology allows for a compact yet powerful design, while its advanced error correction and wear-leveling algorithms offer peace of mind when it comes to data integrity and longevity

Key Features

High density NAND Flash memories
– 512 Mbit memory array
– Cost effective solutions for mass storage applications
NAND interface
– x 8 or x 16 bus width
– Multiplexed Address/ Data
Supply voltage: 1.8 V, 3.0 V
Page size
– x 8 device: (512 + 16 spare) bytes
– x 16 device: (256 + 8 spare) words
Block size
– x 8 device: (16 K + 512 spare) bytes
– x 16 device: (8 K + 256 spare) words
Page Read/Program
– Random access: 12 µs (3 V)/15 µs (1.8 V) (max)
– Sequential access: 30 ns (3 V)/50 ns (1.8 V) (min)
– Page Program time: 200 µs (typ)
Copy Back Program mode
Fast Block Erase: 2 ms (typ)
Status Register
Electronic signature
Chip Enable ‘don’t care’
Serial Number option
Hardware Data Protection
– Program/Erase locked during Power transitions
Data integrity
– 100,000 Program/Erase cycles (with ECC)
– 10 years Data Retention
ECOPACK® packages
Development tools
– Error Correction Code models
– Bad Blocks Management and Wear Leveling algorithms
– Hardware simulation models

Specifications

Programmabe	Not Verified	Memory Type	Non-Volatile
Memory Format	FLASH	Technology	FLASH - NAND
Memory Size	512Mbit	Memory Organization	64M x 8
Memory Interface	Parallel	Clock Frequency	-
Write Cycle Time - Word, Page	50ns	Access Time	50 ns
Voltage - Supply	2.7V ~ 3.6V	Operating Temperature	-40°C ~ 85°C (TA)
Mounting Type	Surface Mount