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See Technical Specifications

NAND512W3A2DN6E +BOM

Advanced NAND technology for high-performance and low-power consumption in various embedded systems

Manufacturer:

Micron Technology Inc.
Mfr.Part #:

NAND512W3A2DN6E
Datasheet:

NAND512W3A2DN6E Datasheet (PDF)
Part Life Cycle Code:

Obsolete
ECCN Code:

EAR99
HTS Code:

8542.32.00.51
Access Time-Max:

35 ns
EDA/CAD Models:

Request Free CAD Models for NAND512W3A2DN6E

NAND512W3A2DN6E General Description

With its multi-level cell (MLC) architecture, the NAND512W3A2DN6E offers unparalleled storage capacity, making it ideal for demanding applications like solid-state drives (SSDs) and consumer electronics devices. The 63-ball VTSOP package allows for seamless integration into various hardware designs, maximizing board space utilization

Specifications

Part Life Cycle Code	Obsolete	Reach Compliance Code
ECCN Code	EAR99	HTS Code	8542.32.00.51
Access Time-Max	35 ns	Command User Interface	YES
Data Polling	NO	JESD-30 Code	R-PDSO-G48
JESD-609 Code	e3	Length	18.4 mm
Memory Density	536870912 bit	Memory IC Type	FLASH
Memory Width	8	Moisture Sensitivity Level	3
Number of Functions	1	Number of Sectors/Size	4K
Number of Terminals	48	Number of Words	67108864 words
Number of Words Code	64000000	Operating Mode	ASYNCHRONOUS
Operating Temperature-Max	85 °C	Operating Temperature-Min	-40 °C
Organization	64MX8	Page Size	512 words
Parallel/Serial	PARALLEL	Peak Reflow Temperature (Cel)	260
Programming Voltage	3 V	Qualification Status	Not Qualified
Ready/Busy	YES	Seated Height-Max	1.2 mm
Sector Size	16K	Standby Current-Max	0.00005 A
Supply Current-Max	0.03 mA	Supply Voltage-Max (Vsup)	3.6 V
Supply Voltage-Min (Vsup)	2.7 V	Supply Voltage-Nom (Vsup)	3 V
Surface Mount	YES	Technology	CMOS
Temperature Grade	INDUSTRIAL	Terminal Finish	Matte Tin (Sn)
Terminal Form	GULL WING	Terminal Pitch	0.5 mm
Terminal Position	DUAL	Time@Peak Reflow Temperature-Max (s)	30
Toggle Bit	NO	Type	SLC NAND TYPE
Width	12 mm