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NE68133 +BOM

L Band Silicon NPN RF Small Signal Transistor in Plastic Package

Manufacturer:

Renesas Electronics
Mfr.Part #:

NE68133
Datasheet:

NE68133 Datasheet (PDF)
Transistor Polarity:

NPN
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

10 V
Collector- Base Voltage VCBO:

20 V
EDA/CAD Models:

Request Free CAD Models for NE68133

NE68133 General Description

DESCRIPTIONNECs NE681 series of NPN epitaxial silicon transistors are designed for low noise, high gain, low cost amplifier applications. Both the chip and micro-x versions are suitable for amplifier applications up to 4 GHz. The NE681 die is also available in six different low cost plastic surface mount package styles. NE681s unique device characteristics allow you to use a single matching point to simultaneously achieve both low noise and high gain.FEATURES• HIGH GAIN BANDWIDTH PRODUCT: fT = 8 GHz• LOW NOISE FIGURE: 1.2 dB at 1 GHz 1.6 dB at 2 GHz• HIGH ASSOCIATED GAIN: 15 dB at 1 GHz 12 dB at 2 GHz• LOW COST

Specifications

Product Category	Bipolar Transistors - BJT	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	10 V
Collector- Base Voltage VCBO	20 V	Emitter- Base Voltage VEBO	1.5 V
Maximum DC Collector Current	65 mA	Pd - Power Dissipation	200 mW
Gain Bandwidth Product fT	9 GHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	DC Collector/Base Gain hfe Min	50 at 7 mA, 3 V
Height	1.4 mm	Length	2.9 mm
Product Type	BJTs - Bipolar Transistors	Subcategory	Transistors
Technology	Si	Width	1.5 mm