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NE68033-T1B-A +BOM

Bipolar transistor with excellent frequency response characteristic

NE68033-T1B-A General Description

RF Transistor NPN 10V 35mA 10GHz 200mW Surface Mount SOT-23-3

Specifications

Product Category RF Bipolar Transistors Transistor Type Bipolar
Technology Si Transistor Polarity NPN
Operating Frequency 2 GHz Collector- Emitter Voltage VCEO Max 10 V
Emitter- Base Voltage VEBO 1.5 V Continuous Collector Current 35 mA
Minimum Operating Temperature - 65 C Maximum Operating Temperature + 150 C
Configuration Single Mounting Style SMD/SMT
DC Current Gain hFE Max 250 Gain Bandwidth Product fT 10 GHz
Height 1.1 mm Length 2.9 mm
Pd - Power Dissipation 200 mW (1/5 W) Product Type RF Bipolar Transistors
Factory Pack Quantity 3000 Subcategory Transistors
Type RF Bipolar Small Signal Width 1.5 mm
Part # Aliases 2SC3585-T1B-A Unit Weight 0.000282 oz

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