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NE5511279A +BOM

RF Power MOSFET

  • Manufacturer:

    NEC ELECTRONICS CORP

  • Mfr.Part #:

    NE5511279A

  • Datasheet:

    NE5511279A Datasheet (PDF) pdf-icon

  • Pbfree Code:

    No

  • Part Life Cycle Code:

    Transferred

  • Pin Count:

    4

  • Reach Compliance Code:

    compliant

NE5511279A General Description

Support is limited to customers who have already adopted these products.

This product is discontinued product or is discontinued notice product.

Key Features

  • Low input bias current: <±3nA
  • Low input offset current: <±3nA
  • Low input offset voltage:<1mV
  • Low supply current: 1.5mA/A
  • 1V/µs slew rate
  • High input impedance: 100MΩ
  • High common-mode impedance: 10GΩ
  • Internal compensation for unity gain
  • 600Ω drive capability (7VRMS)

Application

  • AC amplifiers
  • RC active filters
  • Transducer amplifiers
  • DC gain block
  • Instrumentation amplifier

Specifications

Pbfree Code No Part Life Cycle Code Transferred
Pin Count 4 Reach Compliance Code compliant
ECCN Code EAR99 Case Connection SOURCE
Configuration SINGLE DS Breakdown Voltage-Min 8 V
Drain Current-Max (ID) 3 A FET Technology METAL-OXIDE SEMICONDUCTOR
Highest Frequency Band ULTRA HIGH FREQUENCY BAND JESD-30 Code R-XQMW-F4
JESD-609 Code e0 Number of Elements 1
Number of Terminals 4 Operating Mode ENHANCEMENT MODE
Polarity/Channel Type N-CHANNEL Qualification Status Not Qualified
Surface Mount YES Terminal Finish TIN LEAD
Terminal Form FLAT Terminal Position QUAD
Transistor Application AMPLIFIER Transistor Element Material SILICON

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