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NGTB25N120LWG +BOM

Three-pin, tab-connected package suitable for high-voltage and high-current usa

Manufacturer:

Onsemi
Mfr.Part #:

NGTB25N120LWG
Datasheet:

NGTB25N120LWG Datasheet (PDF)
Compliance:

PbAHP
Case Outline:

340L-02
MSL Type:

NA
MSL Temp (°C):

0
EDA/CAD Models:

Request Free CAD Models for NGTB25N120LWG

NGTB25N120LWG General Description

Designed for optimum performance in demanding switching applications, the NGTB25N120LWG Insulated Gate Bipolar Transistor features a robust Field Stop Trench construction that ensures reliable operation under heavy loads. With its low on-state voltage and minimal switching loss, this IGBT delivers superior performance, making it a cost-effective choice for industries looking to enhance their power management capabilities. The inclusion of a rugged co-packaged free wheeling diode with low forward voltage further enhances the device's durability and efficiency, making it a dependable solution for a wide range of applications

Key Features

Easy Integration with Other Components
High Frequency Performance and Isolation
Safe Operating Area for Reliable Operation
Low EMI and RFI Radiation for Noise Reduction

Application

Power Tools
Data Storage Solutions
Robotics

Specifications

Status	Obsolete	Compliance	PbAHP
Case Outline	340L-02	MSL Type	NA
MSL Temp (°C)	0	Container Type	TUBE
Container Qty.	30	ON Target	N
V(BR)CES Typ (V)	1200	IC Max (A)	25
VCE(sat) Typ (V)	1.85	VF Typ (V)	1.7
Eoff Typ (mJ)	0.8	Eon Typ (mJ)	3.4
Gate Charge Typ (nC)	200	Short Circuit Withstand (µs)	5
PD Max (W)	192	Pricing ($/Unit)	Price N/A