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See Technical Specifications

NGTB50N120FL2WG +BOM

IGBT, 1200V 50A FS2 Solar/UPS

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NGTB50N120FL2WG
Datasheet:

NGTB50N120FL2WG Datasheet (PDF)
IGBT Type:

Trench Field Stop
Voltage - Collector Emitter Breakdown (Max):

1200 V
Current - Collector (Ic) (Max):

100 A
Current - Collector Pulsed (Icm):

200 A
EDA/CAD Models:

Request Free CAD Models for NGTB50N120FL2WG

NGTB50N120FL2WG General Description

The NGTB50N120FL2WG Insulated Gate Bipolar Transistor (IGBT) is designed to excel in demanding switching applications. Its Field Stop II Trench construction delivers both robustness and cost-effectiveness, while its superior performance offers low on-state voltage and minimal switching loss. These features make the IGBT an ideal choice for UPS and solar applications. Additionally, the device incorporates a co-packaged free wheeling diode with a low forward voltage, ensuring soft and fast operation

Key Features

High-Speed Diode Solution
Low Loss and High Efficiency
Safe Operating Temperature Range
Soft Recovery for Reliable Operation
Optimized for High Frequency Applications
Rapid Reverse Recovery Time

Application

Efficient Lighting Solutions
Home Security Systems
Industrial Automation

Specifications

Category	Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs	Series	-
IGBT Type	Trench Field Stop	Voltage - Collector Emitter Breakdown (Max)	1200 V
Current - Collector (Ic) (Max)	100 A	Current - Collector Pulsed (Icm)	200 A
Vce(on) (Max) @ Vge, Ic	2.2V @ 15V, 50A	Power - Max	535 W
Switching Energy	4.4mJ (on), 1.4mJ (off)	Input Type	Standard
Gate Charge	311 nC	Td (on/off) @ 25°C	118ns/282ns
Test Condition	600V, 50A, 10Ohm, 15V	Reverse Recovery Time (trr)	256 ns
Operating Temperature	-55°C ~ 175°C (TJ)	Mounting Type	Through Hole
Base Product Number	NGTB50