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NGTB50N60FLWG +BOM

3-pin (3+tab) TO-247 tube housing a transistor IGBT chip capable of dissipating 223W of power

Manufacturer:

Onsemi
Mfr.Part #:

NGTB50N60FLWG
Datasheet:

NGTB50N60FLWG Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Configuration:

Single
Collector- Emitter Voltage VCEO Max:

600 V
EDA/CAD Models:

Request Free CAD Models for NGTB50N60FLWG

NGTB50N60FLWG General Description

Manufactured by Infineon Technologies AG, the NGTB50N60FLWG power MOSFET offers advanced features that cater to the needs of high-power switching applications. Its 600-volt voltage rating and 50-ampere maximum continuous drain current make it a reliable choice for industrial and automotive systems. The TO-247 package type ensures efficient heat dissipation, while its low on-state voltage drop, fast switching speed, and high ruggedness make it suitable for motor control, power supplies, inverters, and induction heating applications. With its superior performance and reliability, this MOSFET is well-suited for applications that demand efficient power management and high reliability

Key Features

High Frequency Filtering
Improved Power Conversion
Compact Module Solution

Application

Grid Tie Power Inverters
Industrial Power Equipment
High-Quality Power Electronics

Specifications

Product Category	IGBT Transistors	Technology	Si
Mounting Style	Through Hole	Configuration	Single
Collector- Emitter Voltage VCEO Max	600 V	Collector-Emitter Saturation Voltage	1.65 V
Maximum Gate Emitter Voltage	- 20 V, + 20 V	Continuous Collector Current at 25 C	100 A
Pd - Power Dissipation	223 W	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Series	NGTB50N60FLWG
Gate-Emitter Leakage Current	200 nA	Product Type	IGBT Transistors
Factory Pack Quantity	30	Subcategory	IGBTs
Unit Weight	0.229281 oz