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NTR4501NT1G +BOM

MOSFET N-CH 20V 3.2A SOT23-3

NTR4501NT1G General Description

This is a 20 V N-Channel Power MOSFET.

Key Features

  • Leading Planar Technolgy for Low Gate Charge / Fast Switching
  • 2.5 V rated for Low Voltage Gate Drive
  • SOT-23 Surface Mount For Small Footprint (3 mm x 3 mm)
  • RoHS Compliant

Application

  • Load/Power Switch for Portables
  • Load/Power Switch for Computing
  • DC to DC Conversion

Specifications

Source Content uid NTR4501NT1G Pbfree Code Yes
Part Life Cycle Code Active Pin Count 3
Reach Compliance Code compliant ECCN Code EAR99
Factory Lead Time 66 Weeks Configuration SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min 20 V Drain Current-Max (ID) 3.2 A
Drain-source On Resistance-Max 0.08 Ω FET Technology METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss) 50 pF JEDEC-95 Code TO-236
JESD-30 Code R-PDSO-G3 JESD-609 Code e3
Moisture Sensitivity Level 1 Number of Elements 1
Number of Terminals 3 Operating Mode ENHANCEMENT MODE
Operating Temperature-Max 150 °C Operating Temperature-Min -55 °C
Peak Reflow Temperature (Cel) 260 Polarity/Channel Type N-CHANNEL
Power Dissipation-Max (Abs) 1.25 W Pulsed Drain Current-Max (IDM) 10 A
Qualification Status Not Qualified Surface Mount YES
Terminal Finish MATTE TIN Terminal Form GULL WING
Terminal Position DUAL Time@Peak Reflow Temperature-Max (s) 30
Transistor Application SWITCHING Transistor Element Material SILICON
Turn-off Time-Max (toff) 30 ns Turn-on Time-Max (ton) 37 ns

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