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See Technical Specifications

PSMN1R0-30YLDX +BOM

N-Channel 30 V 100A (Tc) 238W (Tc) Surface Mount LFPAK56, Power-SO8

Manufacturer:

Nexperia
Mfr.Part #:

PSMN1R0-30YLDX
Datasheet:

PSMN1R0-30YLDX Datasheet (PDF)
Technology:

Si
Mounting Style:

SMD/SMT
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

PSMN1R0-30YLDX General Description

300 Amp Logic level gate drive N-channel enhancement mode MOSFET in LFPAK56 package. NextPowerS3 portfolio utilising Nexperia’s unique “SchottkyPlus” technology delivers high efficiency, low spiking performance usually associated with MOSFETs with an integrated Schottky or Schottky-like diode but without problematic high leakage current. NextPowerS3 is particularly suited to high efficiency applications at high switching frequencies.

Key Features

300 Amp capability
Avalanche rated, 100 % tested at I(as) = 190 Amps
Ultra low QG, QGD and QOSS for high system efficiency, especially at higher switching frequencies
Superfast switching with soft-recovery; s-factor > 1
Low spiking and ringing for low EMI designs
Unique “SchottkyPlus” technology; Schottky-like performance with < 1 µA leakage at 25 °C
Optimised for 4.5 V gate drive
Low parasitic inductance and resistance
High reliability clip bonded and solder die attach Power SO8 package; no glue, no wire bonds, qualified to 175 °C
Wave solderable; exposed leads for optimal visual solder inspection

Application

On-board DC-to-DC solutions for server and telecommunications
Secondary-side synchronous rectification in telecommunication applications
Voltage regulator modules (VRM)
Point-of-Load (POL) modules
Power delivery for V-core, ASIC, DDR, GPU, VGA and system components
Brushed and brushless motor control
Power OR-ing

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	SMD/SMT	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	30 V
Id - Continuous Drain Current	300 A	Rds On - Drain-Source Resistance	1.02 mOhms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.2 V
Qg - Gate Charge	80.9 nC	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	238 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	31.7 ns	Product Type	MOSFET
Rise Time	44.4 ns	Factory Pack Quantity	1500
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	43 ns	Typical Turn-On Delay Time	32.4 ns
Part # Aliases	934068234115	Unit Weight	0.003225 oz