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PSMN015-100P +BOM

N-Channel 100 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

PSMN015-100P General Description

N-Channel 100 V 75A (Tc) 300W (Tc) Through Hole TO-220AB

NXP Inventory

Key Features

  • Low conduction losses due to low on-state resistance
  • Rated for avalanche ruggedness
NXP Original Stock

Application

  • DC-to-DC convertors
  • Switched-mode power supplies
NXP Inventory

Specifications

Part Life Cycle Code Transferred Reach Compliance Code
ECCN Code EAR99 Configuration SINGLE
Drain Current-Max (ID) 75 A FET Technology METAL-OXIDE SEMICONDUCTOR
JESD-609 Code e3 Number of Elements 1
Operating Mode ENHANCEMENT MODE Operating Temperature-Max 175 °C
Polarity/Channel Type N-CHANNEL Power Dissipation-Max (Abs) 230 W
Surface Mount NO Terminal Finish Matte Tin (Sn)
Product Category MOSFET Technology Si
Mounting Style Through Hole Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 100 V
Id - Continuous Drain Current 75 A Rds On - Drain-Source Resistance 15 mOhms
Vgs - Gate-Source Voltage - 20 V, + 20 V Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 175 C Pd - Power Dissipation 300 W
Channel Mode Enhancement Fall Time 50 ns
Height 9.4 mm Length 10.3 mm
Product Type MOSFET Rise Time 65 ns
Factory Pack Quantity 50 Subcategory MOSFETs
Transistor Type 1 N-Channel Typical Turn-Off Delay Time 95 ns
Typical Turn-On Delay Time 25 ns Width 4.7 mm
Part # Aliases PSMN015-100P,127 Unit Weight 0.068784 oz

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