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See Technical Specifications

SBC807-25LT1G +BOM

PNP Bipolar Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBC807-25LT1G
Datasheet:

SBC807-25LT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

PNP
Current - Collector (Ic) (Max):

500 mA
Voltage - Collector Emitter Breakdown (Max):

45 V
EDA/CAD Models:

Request Free CAD Models for SBC807-25LT1G

Email: [email protected]

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Tel: +852 95804164

SBC807-25LT1G General Description

With the SBC807-25LT1G, users can expect consistent and stable performance, thanks to its superior design and construction. This product is a testament to the commitment to excellence and innovation, offering a solution that meets the needs of today's technology-driven world

Key Features

High-Temperature Operation for Demanding Applications
Enhanced Signal Integrity for Reliable Data Transfer
Compact Design for Space-Constrained Systems

Application

EMC Compliance
Overtemperature Protection
Automatic Recovery

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	PNP	Current - Collector (Ic) (Max)	500 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	Vce Saturation (Max) @ Ib, Ic	700mV @ 50mA, 500mA
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	160 @ 100mA, 1V
Power - Max	300 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SBC807	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	PNP
Configuration	Single	Collector- Emitter Voltage VCEO Max	45 V
Collector- Base Voltage VCBO	50 V	Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	700 mV	Maximum DC Collector Current	500 mA
Pd - Power Dissipation	225 mW	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	Continuous Collector Current	- 500 mA
DC Collector/Base Gain hfe Min	160	DC Current Gain hFE Max	400
Height	0.94 mm	Length	2.9 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Width	1.3 mm	Unit Weight	0.000282 oz