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See Technical Specifications

SBC857BLT1G +BOM

PNP type bipolar junction transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBC857BLT1G
Datasheet:

SBC857BLT1G Datasheet (PDF)
Series:

Automotive, AEC-Q101
Transistor Type:

PNP
Current - Collector (Ic) (Max):

100 mA
Voltage - Collector Emitter Breakdown (Max):

45 V
EDA/CAD Models:

Request Free CAD Models for SBC857BLT1G

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SBC857BLT1G General Description

With its carefully designed construction and high-quality materials, the SBC857BLT1G ensures reliable performance and durability, meeting the demands of modern technology and innovation. Whether you're looking to amplify signals or control power flow, this transistor is a valuable component for achieving optimal results

Key Features

SMT Assemblies Available
RoHS Compliant and Halogen-Free
Automotive-Grade Quality Assurance
Wide Temperature Range for Industrial Applications
Low Power Consumption for Energy-Efficient Designs
AEC-Q100 Qualified for Space and Aerospace Apps

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	Automotive, AEC-Q101
Transistor Type	PNP	Current - Collector (Ic) (Max)	100 mA
Voltage - Collector Emitter Breakdown (Max)	45 V	Vce Saturation (Max) @ Ib, Ic	650mV @ 5mA, 100mA
Current - Collector Cutoff (Max)	15nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	220 @ 2mA, 5V
Power - Max	300 mW	Frequency - Transition	100MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	SBC857	Product Category	Bipolar Transistors - BJT
Mounting Style	SMD/SMT	Transistor Polarity	PNP
Configuration	Single	Collector- Emitter Voltage VCEO Max	45 V
Collector- Base Voltage VCBO	50 V	Emitter- Base Voltage VEBO	5 V
Collector-Emitter Saturation Voltage	650 mV	Maximum DC Collector Current	100 mA
Pd - Power Dissipation	225 mW	Gain Bandwidth Product fT	100 MHz
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Qualification	AEC-Q101	Continuous Collector Current	- 100 mA
DC Collector/Base Gain hfe Min	220 at - 2 mA, - 5 V	DC Current Gain hFE Max	475 at - 2 mA, - 5 V
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Unit Weight	0.000282 oz