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See Technical Specifications

SBC846BDW1T1G +BOM

Dual NPN Bipolar Transistor

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBC846BDW1T1G
Datasheet:

SBC846BDW1T1G Datasheet (PDF)
Case Outline:

419B-02
MSL Temp (°C):

260
Container Type:

REEL
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for SBC846BDW1T1G

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SBC846BDW1T1G General Description

Operating within a wide junction temperature range of -65°C to +150°C, the SBC846BDW1T1G is suitable for diverse operating environments, ensuring reliable performance under varying conditions. Its small form factor, measuring approximately 3.95mm x 2.9mm x 1.52mm, further enhances its versatility, making it suitable for a range of applications requiring space-saving solutions

Key Features

AEC-Q100 Qualified for High-Speed Applications
ISO 9001:2015 Certified for Quality Management
SMD Package Dimensions: 3000 mils x 1500 mils
FCC Part 15, Subpart B and EN61000-3 Compliant
IATF16949:2016 and ISO 14001 Certified
Automotive Industry Approved for High Reliability

Specifications

Status	Active	Case Outline	419B-02
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN	Configuration	Dual
Collector- Emitter Voltage VCEO Max	65 V	Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	600 mV
Maximum DC Collector Current	100 mA	Pd - Power Dissipation	380 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Qualification	AEC-Q101
Series	BC846B	Continuous Collector Current	100 mA
DC Collector/Base Gain hfe Min	200	DC Current Gain hFE Max	450
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	3000
Subcategory	Transistors	Technology	Si
Unit Weight	0.000265 oz