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SBC846BPDW1T1G +BOM

Automotive Grade Transistor with 65V Voltage Rating

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

SBC846BPDW1T1G
Datasheet:

SBC846BPDW1T1G Datasheet (PDF)
Case Outline:

419B-02
MSL Temp (°C):

260
Container Type:

REEL
Mounting Style:

SMD/SMT
EDA/CAD Models:

Request Free CAD Models for SBC846BPDW1T1G

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SBC846BPDW1T1G General Description

When it comes to general purpose amplifier applications, the SBC846BPDW1T1G Dual NPN PNP Bipolar Transistor is a top choice. Its versatile design and high-quality construction make it suitable for a wide range of electronic devices and systems. Housed in the SOT-363/SC-88 package, this transistor is perfect for low power surface mount applications, offering reliability and efficiency in a compact form factor

Key Features

AECQ100 Qualified and PPAP Capable
Complies with Automotive ISO/IEC 17025 Requirements
Suitable for High-Temperature Applications Up to 125°C
Automotive and Industrial Applications Supported

Application

Magical
Spectacular
Enchanting

Specifications

Status	Active	Case Outline	419B-02
MSL Temp (°C)	260	Container Type	REEL
Product Category	Bipolar Transistors - BJT	Mounting Style	SMD/SMT
Transistor Polarity	NPN, PNP	Configuration	Dual
Collector- Emitter Voltage VCEO Max	65 V	Collector- Base Voltage VCBO	80 V
Emitter- Base Voltage VEBO	6 V	Collector-Emitter Saturation Voltage	600 mV, 650 mV
Maximum DC Collector Current	100 mA	Pd - Power Dissipation	380 mW
Gain Bandwidth Product fT	100 MHz	Minimum Operating Temperature	- 55 C
Maximum Operating Temperature	+ 150 C	Qualification	AEC-Q101
Series	BC846BPDW1	DC Collector/Base Gain hfe Min	200 at 2 mA, 5 V
DC Current Gain hFE Max	475 at 2 mA, 5 V	Product Type	BJTs - Bipolar Transistors
Factory Pack Quantity	3000	Subcategory	Transistors
Technology	Si	Unit Weight	0.000265 oz