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See Technical Specifications

ZVN2110G +BOM

Trans MOSFET N-CH 100V 0.5A Automotive 4-Pin(3+Tab) SOT-223

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN2110G
Datasheet:

ZVN2110G Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

500mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVN2110G

ZVN2110G General Description

The ZVN2110G MOSFET is a versatile semiconductor device suitable for a wide range of electronic applications. With a maximum drain-source voltage of 100V and a gate threshold voltage of 2.4V, this N-channel transistor can operate effectively in various voltage-controlled circuits. The SOT-223 package and SMD termination make for easy integration into compact PCB designs with limited space. The ZVN2110G's low on-resistance of 4ohm allows for efficient current conduction, while its 10V gate-source voltage ensures smooth switching performance. Whether used in power supplies, motor control circuits, or LED drivers, the ZVN2110G MOSFET offers reliable operation and long-term stability. Its 2W power dissipation rating and ability to handle pulsed currents up to 6A make it a robust solution for demanding applications where performance and reliability are key

Key Features

FAST SWITCHING

Application

SWITCHING

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	4Ohm @ 1A, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	75 pF @ 25 V	Power Dissipation (Max)	2W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZVN2110