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See Technical Specifications

ZVN3310A +BOM

This TO-92-3 packaged MOSFET conforms to the RoHS (Restriction of Hazardous Substances) directive

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN3310A
Datasheet:

ZVN3310A Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

200mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVN3310A

ZVN3310A General Description

The ZVN3310A is a versatile N-channel enhancement mode vertical DMOS FET that is designed for small signal field-effect transistor applications. With a maximum drain current (I(D)) rating of 0.2A and a drain-source voltage (V(DSS)) rating of 100V, this transistor is suitable for a wide range of low-power electronic circuits

Key Features

100 Volt VDS
RDS(on)= 10Ω

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	200mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	10V	Rds On (Max) @ Id, Vgs	10Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	2.4V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	40 pF @ 25 V	Power Dissipation (Max)	625mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	ZVN3310