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See Technical Specifications

ZVN4206AV +BOM

This product, labeled ZVN4206AV, is a N-channel MOSFET suitable for applications with voltage requirements up to 60 volts and current demands up to 0

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN4206AV
Datasheet:

ZVN4206AV Datasheet (PDF)
Technology:

Si
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel

ZVN4206AV General Description

This product is designed for low-power applications and operates as a voltage-controlled switch. The N-channel construction allows for efficient electron flow, making it suitable for use in a variety of electronic devices and circuits. The TO-92 compatible packaging provides a convenient and familiar form factor for mounting and installation

Key Features

60 Volt VDS
RDS(on)= 1Ω
Repetitive avalanche rating
No transient protection required
Characterised for 5V logic drive

Specifications

Product Category	MOSFET	Technology	Si
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	60 V
Id - Continuous Drain Current	600 mA	Rds On - Drain-Source Resistance	1 Ohms
Vgs - Gate-Source Voltage	- 20 V, + 20 V	Vgs th - Gate-Source Threshold Voltage	1.3 V
Minimum Operating Temperature	- 55 C	Maximum Operating Temperature	+ 150 C
Pd - Power Dissipation	700 mW	Channel Mode	Enhancement
Series	ZVN4206	Configuration	Single
Fall Time	15 ns	Forward Transconductance - Min	300 mS
Height	4.01 mm	Length	4.77 mm
Product	MOSFET Small Signals	Product Type	MOSFET
Rise Time	12 ns	Factory Pack Quantity	4000
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Type	FET	Typical Turn-Off Delay Time	12 ns
Typical Turn-On Delay Time	8 ns	Width	2.41 mm
Unit Weight	0.016000 oz