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See Technical Specifications

ZVN4306AV +BOM

N-CHANNEL ENHANCEMENT MODE MOSFET

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN4306AV
Datasheet:

ZVN4306AV Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

60 V
Current - Continuous Drain (Id) @ 25°C:

1.1A (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVN4306AV

ZVN4306AV General Description

In addition, the high input impedance of the ZVN4306AV facilitates seamless interfacing with microcontrollers and digital logic circuits, enabling easy integration into different systems. Whether it's relay drivers, audio amplifiers, LED drivers, or motor controls, this transistor proves to be a valuable component for a wide array of applications

Key Features

60 Volt VDS
RDS(on)= 0.33Ω
Repetitive Avalanche Rating

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	60 V	Current - Continuous Drain (Id) @ 25°C	1.1A (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	330mOhm @ 3A, 10V
Vgs(th) (Max) @ Id	3V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	350 pF @ 25 V	Power Dissipation (Max)	850mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	ZVN4306