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See Technical Specifications

ZVN4424G +BOM

Power Field-Effect Transistor, 0.5A I(D), 240V, 6ohm, 1-Element, N-Channel, Silicon, Metal-oxide Semiconductor FET, SOT-223, 4 PIN

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVN4424G
Datasheet:

ZVN4424G Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

240 V
Current - Continuous Drain (Id) @ 25°C:

500mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVN4424G

ZVN4424G General Description

Design engineers looking for a versatile MOSFET for their electronic circuits can rely on the ZVN4424G. This N-channel transistor boasts a high voltage rating of 240V and a low on-state resistance of 6ohm, making it suitable for a wide range of applications. With a gate threshold voltage of 1.3V, this MOSFET can be easily driven by logic level signals. The SOT-223 package ensures easy integration into existing PCB layouts, and its compact size makes it ideal for space-constrained designs. The MOSFET can handle a continuous current of 0.5A and peak pulse currents of up to 1.5A, ensuring reliable and efficient performance in demanding scenarios

Key Features

240 Volt BVDS
Extremely low RDS(on)=4.3Ω
Low threshold and Fast switching

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	240 V	Current - Continuous Drain (Id) @ 25°C	500mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	2.5V, 10V	Rds On (Max) @ Id, Vgs	5.5Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	1.8V @ 1mA	Vgs (Max)	±40V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V	Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZVN4424