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See Technical Specifications

ZVNL110A +BOM

MOSFET N-Chnl 100V

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVNL110A
Datasheet:

ZVNL110A Datasheet (PDF)
FET Type:

N-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

100 V
Current - Continuous Drain (Id) @ 25°C:

320mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVNL110A

ZVNL110A General Description

Utilizing advanced technology and high-quality materials, the ZVNL110A FET offers reliable performance in demanding environments. Its compact size and robust construction make it ideal for space-constrained applications without compromising on functionality. Whether used in audio amplifiers, LED drivers, or power management systems, this transistor excels in delivering consistent and efficient operation for enhanced electronic designs

Key Features

100 Volt VDS
RDS(on)=3Ω
Low threshold voltage

Specifications

FET Type	N-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	100 V	Current - Continuous Drain (Id) @ 25°C	320mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	5V, 10V	Rds On (Max) @ Id, Vgs	3Ohm @ 500mA, 10V
Vgs(th) (Max) @ Id	1.5V @ 1mA	Vgs (Max)	±20V
Input Capacitance (Ciss) (Max) @ Vds	75 pF @ 25 V	Power Dissipation (Max)	700mW (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Through Hole
Base Product Number	ZVNL110