This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

Images are for reference only,

See Technical Specifications

ZVP4424G +BOM

channel semiconductor device designed for power applications with a maximum current rating of 0

Manufacturer:

Diodes Incorporated
Mfr.Part #:

ZVP4424G
Datasheet:

ZVP4424G Datasheet (PDF)
FET Type:

P-Channel
Technology:

MOSFET (Metal Oxide)
Drain To Source Voltage (Vdss):

240 V
Current - Continuous Drain (Id) @ 25°C:

480mA (Ta)
EDA/CAD Models:

Request Free CAD Models for ZVP4424G

ZVP4424G General Description

The ZVP4424G is the go-to choice for engineers looking for a power MOSFET that delivers on performance and reliability. Its robust design and high-quality construction make it a standout in the world of semiconductor components, with a focus on low voltage, high-speed switching applications

Key Features

240 Volt VDS
RDS(on)= 8.8Ω typical at VGS=-3.5V
Low threshold and Fast switching

Specifications

FET Type	P-Channel	Technology	MOSFET (Metal Oxide)
Drain to Source Voltage (Vdss)	240 V	Current - Continuous Drain (Id) @ 25°C	480mA (Ta)
Drive Voltage (Max Rds On, Min Rds On)	3.5V, 10V	Rds On (Max) @ Id, Vgs	9Ohm @ 200mA, 10V
Vgs(th) (Max) @ Id	2V @ 1mA	Vgs (Max)	±40V
Input Capacitance (Ciss) (Max) @ Vds	200 pF @ 25 V	Power Dissipation (Max)	2.5W (Ta)
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	ZVP4424