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See Technical Specifications

C3M0016120D +BOM

Reliable and efficient power component solutio

Manufacturer:

Wolfspeed
Mfr.Part #:

C3M0016120D
Datasheet:

C3M0016120D Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C3M0016120D

C3M0016120D General Description

Wolfspeed's C3M0016120D Silicon Carbide Power MOSFET, part of the third generation of SiC MOSFETs, stands out for its high switching performance. With fast switching speeds and low switching losses, this MOSFET is well-suited for high frequency operation and applications requiring rapid switching. These features make the C3M0016120D an ideal choice for power electronics where efficiency and performance are crucial

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	115 A	Rds On - Drain-Source Resistance	22.3 mOhms
Vgs - Gate-Source Voltage	- 8 V, + 19 V	Vgs th - Gate-Source Threshold Voltage	1.8 V
Qg - Gate Charge	207 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	556 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	27 ns	Forward Transconductance - Min	53 S
Product Type	MOSFET	Rise Time	28 ns
Factory Pack Quantity	30	Subcategory	MOSFETs
Transistor Type	1 N-Channel	Typical Turn-Off Delay Time	84 ns
Typical Turn-On Delay Time	174 ns	Unit Weight	0.211644 oz