This website uses cookies. By using this site, you consent to the use of cookies. For more information, please take a look at our Privacy Policy.

C3M0065100J +BOM

High power 65mOhm SiC transistor

C3M0065100J General Description

N-Channel 1000 V 35A (Tc) 113.5W (Tc) Surface Mount D2PAK-7

Specifications

Product Category MOSFET Technology SiC
Mounting Style SMD/SMT Transistor Polarity N-Channel
Number of Channels 1 Channel Vds - Drain-Source Breakdown Voltage 1 kV
Id - Continuous Drain Current 35 A Rds On - Drain-Source Resistance 65 mOhms
Vgs - Gate-Source Voltage - 4 V, + 15 V Vgs th - Gate-Source Threshold Voltage 1.8 V
Qg - Gate Charge 35 nC Minimum Operating Temperature - 55 C
Maximum Operating Temperature + 150 C Pd - Power Dissipation 113.5 W
Channel Mode Enhancement Configuration Single
Fall Time 7.5 ns Forward Transconductance - Min 14.3 S
Moisture Sensitive Yes Product Type MOSFET
Rise Time 9 ns Factory Pack Quantity 50
Subcategory MOSFETs Transistor Type 1 N-Channel
Typical Turn-Off Delay Time 13 ns Typical Turn-On Delay Time 13 ns
Unit Weight 0.056438 oz

Service Policies and Others

After-Sales & Settlement Related

payment Payment

Payment Method

hsbc
TT/Wire Transfer
paypal
Paypal
wu
Western Union
mg
Money Gram

For alternative payment channels, please reach out to us at:

[email protected]
shipping Shipping & Packing

Shipping Method

fedex
Fedex
ups
UPS
dhl
DHL
tnt
NTN
Packing

AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

Warranty Warranty

We promise to provide 365 days quality assurance service for all our products.

Reviews

You need to log in to reply. Sign In | Sign Up