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See Technical Specifications

C3M0040120D +BOM

66A current handling capability

Manufacturer:

Wolfspeed
Mfr.Part #:

C3M0040120D
Datasheet:

C3M0040120D Datasheet (PDF)
Technology:

SiC
Mounting Style:

Through Hole
Transistor Polarity:

N-Channel
Number Of Channels:

1 Channel
EDA/CAD Models:

Request Free CAD Models for C3M0040120D

C3M0040120D General Description

The C3M0040120D is a cutting-edge silicon carbide power MOSFET module that raises the bar for high-power applications. With a focus on efficiency, reliability, and thermal performance, this module is a standout choice for demanding projects. Belonging to the renowned Wolfspeed C3M family, known for its exceptional switching frequencies and low on-state resistance, the C3M0040120D doesn't disappoint. Boasting a robust breakdown voltage of 1200V and a continuous drain current of 40A, it is well-equipped to handle a variety of tasks across different industries

Specifications

Product Category	MOSFET	Technology	SiC
Mounting Style	Through Hole	Transistor Polarity	N-Channel
Number of Channels	1 Channel	Vds - Drain-Source Breakdown Voltage	1.2 kV
Id - Continuous Drain Current	66 A	Rds On - Drain-Source Resistance	40 mOhms
Vgs - Gate-Source Voltage	- 4 V, + 15 V	Vgs th - Gate-Source Threshold Voltage	3.6 V
Qg - Gate Charge	101 nC	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 175 C	Pd - Power Dissipation	326 W
Channel Mode	Enhancement	Configuration	Single
Fall Time	12 ns	Forward Transconductance - Min	21 S
Height	21.1 mm	Length	16.13 mm
Product	MOSFET	Product Type	MOSFET
Rise Time	60 ns	Factory Pack Quantity	30
Subcategory	MOSFETs	Transistor Type	1 N-Channel
Typical Turn-Off Delay Time	25 ns	Typical Turn-On Delay Time	15 ns
Width	5.21 mm