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N-Channel Silicon Carbide Metal-oxide Semiconductor FET
TO-263-7Manufacturer:
WOLFSPEED, INC.
Mfr.Part #:
C3M0075120J
Datasheet:
Part Life Cycle Code:
Active
Reach Compliance Code:
not_compliant
Case Connection:
DRAIN
Configuration:
SINGLE WITH BUILT-IN DIODE
EDA/CAD Models:
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N-Channel 1200 V 30A (Tc) 113.6W (Tc) Surface Mount D2PAK-7
CECC version (IECQ-CECC approved according to EN 140101-806)
Excellent overall stability: class 0.25
Wide ohmic range: 0.22to 22 M
AEC-Q200 qualified available (1)
Radial version available for MBB/SMA 0207
Alternative termination wires available e.g. weldable wire (MBA/SMA 0204 only)
Material categorization: for definitions of compliance please see
www.vishay.com/doc?99912
Industrial
Telecommunication
Medical equipment
Automotive
Part Life Cycle Code | Active | Reach Compliance Code | not_compliant |
Case Connection | DRAIN | Configuration | SINGLE WITH BUILT-IN DIODE |
DS Breakdown Voltage-Min | 1200 V | Drain Current-Max (ID) | 30 A |
Drain-source On Resistance-Max | 0.09 Ω | FET Technology | METAL-OXIDE SEMICONDUCTOR |
JEDEC-95 Code | TO-263 | JESD-30 Code | R-PSSO-G7 |
Number of Elements | 1 | Number of Terminals | 7 |
Operating Mode | ENHANCEMENT MODE | Peak Reflow Temperature (Cel) | NOT SPECIFIED |
Polarity/Channel Type | N-CHANNEL | Pulsed Drain Current-Max (IDM) | 80 A |
Surface Mount | YES | Terminal Form | GULL WING |
Terminal Position | SINGLE | Time@Peak Reflow Temperature-Max (s) | NOT SPECIFIED |
Transistor Application | SWITCHING | Transistor Element Material | SILICON CARBIDE |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | $11.843 | $11.84 |
10+ | $10.389 | $103.89 |
50+ | $9.503 | $475.15 |
100+ | $8.761 | $876.10 |
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