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Silicon Carbide (SiC) MOSFET
TO-247-3Manufacturer:
Wolfspeed
Mfr.Part #:
C3M0120065D
Datasheet:
Technology:
SiC
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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The C3M0120065D Silicon Carbide Power MOSFET from Wolfspeed is a cutting-edge wide-bandgap semiconductor product that delivers unrivaled performance and reliability. Tailored for power switching applications, this MOSFET boasts a drain-source voltage of 1200V and a continuous drain current rating of 65A, catering to the requirements of high-voltage and high-power industrial, automotive, and renewable energy systems. Its low on-resistance and fast switching speeds enable efficient power conversion and reduced energy losses, leading to enhanced system efficiency and thermal performance. Encased in a compact and rugged TO-247 package, the MOSFET allows for seamless integration into existing designs while providing robust protection in demanding operating conditions. Furthermore, its high temperature operation capability of up to 175°C ensures consistent performance in challenging environments. With advanced design and construction, the C3M0120065D MOSFET offers enhanced electrical and thermal performance, guaranteeing long-term reliability and durability
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 22 A | Rds On - Drain-Source Resistance | 120 mOhms |
Vgs - Gate-Source Voltage | - 4 V, + 15 V | Vgs th - Gate-Source Threshold Voltage | 3.6 V |
Qg - Gate Charge | 28 nC | Minimum Operating Temperature | - 40 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 98 W |
Channel Mode | Enhancement | Configuration | Single |
Fall Time | 8 ns | Forward Transconductance - Min | 5 S |
Height | 21.1 mm | Length | 16.13 mm |
Product | MOSFET | Product Type | MOSFET |
Rise Time | 13 ns | Factory Pack Quantity | 30 |
Subcategory | MOSFETs | Transistor Type | 1 N-Channel |
Typical Turn-Off Delay Time | 17 ns | Typical Turn-On Delay Time | 7 ns |
Width | 5.21 mm |
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