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See Technical Specifications

C3M0032120D +BOM

G3 SiC technology used in the manufacturing of this MOSFET

Manufacturer:

Wolfspeed, Inc.
Mfr.Part #:

C3M0032120D
Datasheet:

C3M0032120D Datasheet (PDF)
Part Life Cycle Code:

Active
Case Connection:

DRAIN
Configuration:

SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min:

1200 V
EDA/CAD Models:

Request Free CAD Models for C3M0032120D

C3M0032120D General Description

One of the standout features of the C3M0032120D module is its compact and lightweight design, which allows for seamless integration into existing systems. Furthermore, its low switching loss and high thermal conductivity contribute to improved overall system efficiency and reduced heat generation. The wide operating temperature range of -40°C to 175°C ensures reliable performance even in the harshest environments

Specifications

Part Life Cycle Code	Active	Reach Compliance Code
Case Connection	DRAIN	Configuration	SINGLE WITH BUILT-IN DIODE
DS Breakdown Voltage-Min	1200 V	Drain Current-Max (ID)	63 A
Drain-source On Resistance-Max	0.043 Ω	FET Technology	METAL-OXIDE SEMICONDUCTOR
Feedback Cap-Max (Crss)	8 pF	JEDEC-95 Code	TO-247
JESD-30 Code	R-PSFM-T3	Number of Elements	1
Number of Terminals	3	Operating Mode	ENHANCEMENT MODE
Operating Temperature-Max	175 °C	Operating Temperature-Min	-40 °C
Peak Reflow Temperature (Cel)	NOT SPECIFIED	Polarity/Channel Type	N-CHANNEL
Power Dissipation-Max (Abs)	283 W	Pulsed Drain Current-Max (IDM)	120 A
Reference Standard	IEC-60747-8-4	Surface Mount	NO
Terminal Form	THROUGH-HOLE	Terminal Position	SINGLE
Time@Peak Reflow Temperature-Max (s)	NOT SPECIFIED	Transistor Application	SWITCHING
Transistor Element Material	SILICON CARBIDE