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DFN EP package 12-pin RF MOSFET
surfacemountManufacturer:
Mfr.Part #:
CGH27030S
Datasheet:
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
2.7 GHz
Gain:
18 dB
All bill of materials (BOM) can be sent via email to
[email protected],
or fill below form to Quote for CGH27030S, guaranteed quotes back within
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RF Mosfet 28 V 200 mA 6GHz 18.3dB 30W 12-DFN (4x3)
Product Category: | RF JFET Transistors | Transistor Type: | HEMT |
Technology: | GaN | Operating Frequency: | 2.7 GHz |
Gain: | 18 dB | Transistor Polarity: | N-Channel |
Vds - Drain-Source Breakdown Voltage: | 84 V | Vgs - Gate-Source Breakdown Voltage: | - 10 V, 2 V |
Id - Continuous Drain Current: | 7 A | Output Power: | 30 W |
Maximum Drain Gate Voltage: | 28 V | Minimum Operating Temperature: | - 40 C |
Maximum Operating Temperature: | + 150 C | Pd - Power Dissipation: | 21.6 W |
Mounting Style: | SMD/SMT | Packaging: | MouseReel |
Application: | Telecom | Configuration: | Single |
Moisture Sensitive: | Yes | Operating Temperature Range: | - 40 C to + 150 C |
Product Type: | RF JFET Transistors | Factory Pack Quantity: | 250 |
Subcategory: | Transistors | Vgs th - Gate-Source Threshold Voltage: | - 3.8 V |
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Delivery is fast. With the screen there is a jamb. For me, not critical. See para. Photo