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CGH40025P +BOM
RF JFET Transistors 25W, GaN HEMT, 28V, DC-4.0GHz, Pill
SMD-
Manufacturer:
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Mfr.Part #:
CGH40025P
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Datasheet:
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Continuous Drain Current (ID):
3 A
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Drain To Source Breakdown Voltage:
84 V
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Drain To Source Voltage (Vdss):
120 V
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Efficiency:
62 %
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EDA/CAD Models:
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Availability: 4923 PCS
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CGH40025P General Description
RF Mosfet 28 V 250 mA 6GHz 13dB 30W 440196
Specifications
Continuous Drain Current (ID) | 3 A | Drain to Source Breakdown Voltage | 84 V |
Drain to Source Voltage (Vdss) | 120 V | Efficiency | 62 % |
Gain | 13 dB | Gate to Source Voltage (Vgs) | -10 V |
Max Frequency | 6 GHz | Max Junction Temperature (Tj) | 225 °C |
Max Operating Temperature | 150 °C | Max Output Power | 25 W |
Min Operating Temperature | -40 °C | Number of Channels | 1 |
Power Dissipation | 14 W | Voltage Rating | 28 V |
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In Stock: 4,923
Minimum Order: 1
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