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CGH31240F +BOM

High-performance transistors for efficient power transmissio

CGH31240F General Description

RF Mosfet 28 V 1 A 2.7GHz ~ 3.1GHz 12dB 250W 440201

Specifications

Product Category: RF JFET Transistors Shipping Restrictions: This product may require additional documentation to export from the United States.
Transistor Type: HEMT Technology: GaN
Operating Frequency: 2.7 GHz to 3.1 GHz Gain: 12 dB
Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 120 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V Id - Continuous Drain Current: 24 A
Output Power: 240 W Maximum Drain Gate Voltage: -
Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: 345 W Mounting Style: Flange Mount
Packaging: Tray Application: Radar
Fall Time: - Forward Transconductance - Min: -
Height: 3.76 mm Length: 24.33 mm
Operating Temperature Range: - Product: GaN HEMT
Product Type: RF JFET Transistors Rise Time: -
Factory Pack Quantity: 1 Subcategory: Transistors
Type: GaN SiC HEMT Typical Turn-Off Delay Time: -
Vgs th - Gate-Source Threshold Voltage: - 3 V Width: 23.62 mm
Unit Weight: 1.132118 oz

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Ratings and Reviews

More
S
S**a 03/23/2023

Various components for good price!

12
v
v**n 06/06/2022

Good amp . No noise ( hiss) .Deep Bass . Mids are muddy and some Distortion on very high volume but overall , good quality sound and powerful kit . Will rock 8 inch woofer. Volume control resistance can be also improved its not smooth.but i will give 5 stars for such quality in less price. Gives Max 50 Watts at 36volts on 4ohm . Not 100w. Using 19v input to get decent sound with 30watt power.Shipment was really fast. Thanks

15
S
S**a 04/13/2021

Everything works fine, thank you!

15
Z
Z**y 02/26/2020

Potentiometers norms.

10

Reviews

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