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CGHV27015S +BOM

RF JFET Transistors for GaN HEMT

CGHV27015S General Description

Electrical properties of the CGHV27015S include a drain-source voltage rating of 85V, a typical gain of 18dB, and a power-added efficiency exceeding 50%. With a high tolerance for input power levels and exceptional thermal management capabilities, this transistor is engineered to withstand continuous operation under demanding high-power settings. Whether in the realm of telecommunications or defense, the CGHV27015S stands ready to deliver unparalleled performance for critical amplifier applications

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series GaN
Technology HEMT Frequency 6GHz
Gain 21dB Voltage - Test 50 V
Current Rating (Amps) - Noise Figure -
Current - Test 60 mA Power - Output 15W
Voltage - Rated 125 V Base Product Number CGHV27015
Pin Count 13 Released Date May 6, 2020
Last Modified Date Mar 7, 2023 4:10 PM UTC

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Ratings and Reviews

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C
C**a 06/23/2023

Went long. But the seller is not to blame. Detained somewhere in the post office! The seller is very polite extended the warranty! Thank you seller!

6
S
S**n 05/06/2022

Excellent quality good power

16
D
D**n 01/11/2021

Superb quality! Thanks!

14

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