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RF JFET Transistors for GaN HEMT
SMDManufacturer:
Mfr.Part #:
CGHV27015S
Datasheet:
Series:
GaN
Technology:
HEMT
Frequency:
6GHz
Gain:
21dB
EDA/CAD Models:
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Electrical properties of the CGHV27015S include a drain-source voltage rating of 85V, a typical gain of 18dB, and a power-added efficiency exceeding 50%. With a high tolerance for input power levels and exceptional thermal management capabilities, this transistor is engineered to withstand continuous operation under demanding high-power settings. Whether in the realm of telecommunications or defense, the CGHV27015S stands ready to deliver unparalleled performance for critical amplifier applications
Category | Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs | Series | GaN |
Technology | HEMT | Frequency | 6GHz |
Gain | 21dB | Voltage - Test | 50 V |
Current Rating (Amps) | - | Noise Figure | - |
Current - Test | 60 mA | Power - Output | 15W |
Voltage - Rated | 125 V | Base Product Number | CGHV27015 |
Pin Count | 13 | Released Date | May 6, 2020 |
Last Modified Date | Mar 7, 2023 4:10 PM UTC |
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1+ | - | - |
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Went long. But the seller is not to blame. Detained somewhere in the post office! The seller is very polite extended the warranty! Thank you seller!