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CGH40090PP +BOM

Advanced GaN HEMT transistor soluti

CGH40090PP General Description

RF Mosfet 28 V 1 A 0Hz ~ 4GHz 12.5dB 100W 440199

Specifications

Category Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs Series GaN
Technology HEMT Frequency 0Hz ~ 4GHz
Gain 12.5dB Voltage - Test 28 V
Current Rating (Amps) 28A Noise Figure -
Current - Test 1 A Power - Output 100W
Voltage - Rated 84 V Base Product Number CGH40
Continuous Drain Current (ID) 12 A Current Rating 28 A
Drain to Source Breakdown Voltage 84 V Drain to Source Voltage (Vdss) 120 V
Efficiency 55 % Gate to Source Voltage (Vgs) -10 V
Max Frequency 4 GHz Max Junction Temperature (Tj) 225 °C
Max Operating Temperature 85 °C Max Output Power 90 W
Min Operating Temperature -40 °C Number of Channels 2
Output Power 100 W Power Dissipation 112 W
Test Current 1 A Test Voltage 28 V
Voltage Rating 28 V

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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Ratings and Reviews

More
O
O**a 01/22/2023

Delivery about a month. Packed well. In appearance of excellent quality. I recommend!

2
J
J**n 09/13/2021

All as in the description. In the case has not yet tried

4
J
J**e 04/19/2021

It came quickly 5 days. All whole, packed normally

13

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