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CGHV40030F +BOM

Compact three-pin package design for easy integratio

RF Mosfet 50 V 150 mA 0Hz ~ 6GHz 16dB 30W 440166

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs	Series	GaN
Technology	HEMT	Frequency	0Hz ~ 6GHz
Gain	16dB	Voltage - Test	50 V
Current Rating (Amps)	4.2A	Noise Figure	-
Current - Test	150 mA	Power - Output	30W
Voltage - Rated	125 V	Base Product Number	CGHV40030
Product Category:	RF JFET Transistors	Transistor Type:	HEMT
Technology:	GaN	Operating Frequency:	0.96 GHz to 1.4 GHz
Gain:	16 dB	Transistor Polarity:	N-Channel
Vds - Drain-Source Breakdown Voltage:	100 V	Vgs - Gate-Source Breakdown Voltage:	2.6 V
Id - Continuous Drain Current:	4.2 A	Output Power:	30 W
Maximum Drain Gate Voltage:	-	Minimum Operating Temperature:	- 40 C
Maximum Operating Temperature:	+ 150 C	Pd - Power Dissipation:	-
Mounting Style:	Screw Mount	Packaging:	Tray
Application:	-	Class:	-
Configuration:	Single	Development Kit:	CGHV40030-TB1
Fall Time:	-	Forward Transconductance - Min:	-
Gate-Source Cutoff Voltage:	- 10 V to + 2 V	Height:	3.43 mm
Length:	14.09 mm	NF - Noise Figure:	-
Operating Temperature Range:	- 40 C to + 150 C	P1dB - Compression Point:	-
Product:	GaN HEMT	Product Type:	RF JFET Transistors
Rds On - Drain-Source Resistance:	-	Rise Time:	-
Factory Pack Quantity:	1	Subcategory:	Transistors
Typical Turn-Off Delay Time:	-	Vgs th - Gate-Source Threshold Voltage:	2.3 V
Width:	4.19 mm	Unit Weight:	0.260886 oz