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CGHV35150F +BOM

Robust transceiver solution for wireless system

CGHV35150F General Description

RF Mosfet 50 V 500 mA 2.9GHz ~ 3.5GHz 13.3dB 170W 440193

Specifications

Product Category: RF JFET Transistors Shipping Restrictions: This product may require additional documentation to export from the United States.
Transistor Type: HEMT Technology: GaN
Operating Frequency: 3.1 GHz to 3.5 GHz Gain: 13.3 dB
Transistor Polarity: N-Channel Vds - Drain-Source Breakdown Voltage: 150 V
Vgs - Gate-Source Breakdown Voltage: - 10 V to 2 V Id - Continuous Drain Current: 12 A
Output Power: 170 W Maximum Drain Gate Voltage: -
Minimum Operating Temperature: - 40 C Maximum Operating Temperature: + 150 C
Pd - Power Dissipation: - Mounting Style: Screw Mount
Packaging: Tray Application: -
Class: - Configuration: Single
Development Kit: CGHV35150-TB Fall Time: -
Forward Transconductance - Min: - Gate-Source Cutoff Voltage: -
Height: - Length: -
NF - Noise Figure: - Operating Temperature Range: -
P1dB - Compression Point: - Product: GaN HEMT
Product Type: RF JFET Transistors Rds On - Drain-Source Resistance: -
Rise Time: - Factory Pack Quantity: 1
Subcategory: Transistors Typical Turn-Off Delay Time: -
Vgs th - Gate-Source Threshold Voltage: - 3 V Width: -

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Ratings and Reviews

More
K
K**n 09/16/2023

Quickly, qualitatively, i advise the seller! Thank you!!

4
S
S**h 10/12/2021

Nuts forgot to put, insulting

9
D
D**h 10/12/2021

In appearance like everything is fine, packed well, two orders combined in one, in one postal package sent a fee issued from them the bms 4S battery litocal came a month ago.I will not collect shurik soon, i can not say anything about the efficiency of the boards. The throttle on the board is horizontal, as i wanted, to the seller my best wishes.

19
P
P**y 06/01/2021

Standard terminals, price norms

2

Reviews

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