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Robust transceiver solution for wireless system
SMDManufacturer:
Mfr.Part #:
CGHV35150F
Datasheet:
Shipping Restrictions:
This product may require additional documentation to export from the United States.
Transistor Type:
HEMT
Technology:
GaN
Operating Frequency:
3.1 GHz to 3.5 GHz
EDA/CAD Models:
All bill of materials (BOM) can be sent via email to
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RF Mosfet 50 V 500 mA 2.9GHz ~ 3.5GHz 13.3dB 170W 440193
Product Category: | RF JFET Transistors | Shipping Restrictions: | This product may require additional documentation to export from the United States. |
Transistor Type: | HEMT | Technology: | GaN |
Operating Frequency: | 3.1 GHz to 3.5 GHz | Gain: | 13.3 dB |
Transistor Polarity: | N-Channel | Vds - Drain-Source Breakdown Voltage: | 150 V |
Vgs - Gate-Source Breakdown Voltage: | - 10 V to 2 V | Id - Continuous Drain Current: | 12 A |
Output Power: | 170 W | Maximum Drain Gate Voltage: | - |
Minimum Operating Temperature: | - 40 C | Maximum Operating Temperature: | + 150 C |
Pd - Power Dissipation: | - | Mounting Style: | Screw Mount |
Packaging: | Tray | Application: | - |
Class: | - | Configuration: | Single |
Development Kit: | CGHV35150-TB | Fall Time: | - |
Forward Transconductance - Min: | - | Gate-Source Cutoff Voltage: | - |
Height: | - | Length: | - |
NF - Noise Figure: | - | Operating Temperature Range: | - |
P1dB - Compression Point: | - | Product: | GaN HEMT |
Product Type: | RF JFET Transistors | Rds On - Drain-Source Resistance: | - |
Rise Time: | - | Factory Pack Quantity: | 1 |
Subcategory: | Transistors | Typical Turn-Off Delay Time: | - |
Vgs th - Gate-Source Threshold Voltage: | - 3 V | Width: | - |
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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.
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Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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