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CGHV14800F +BOM

Advanced MOSFET technology for high-frequency, high-amperage performance

Manufacturer:

WOLFSPEED, INC
Mfr.Part #:

CGHV14800F
Datasheet:

CGHV14800F Datasheet (PDF)
Series:

GaN
Technology:

HEMT
Frequency:

1.4GHz
Gain:

14.5dB
EDA/CAD Models:

Request Free CAD Models for CGHV14800F

CGHV14800F General Description

The CGHV14800F is a gallium nitride (GaN) high-electron-mobility transistor (HEMT) designed for high-frequency and high-power RF applications. It offers high efficiency, high power density, and excellent reliability, making it suitable for demanding RF power amplifier applications.

Key Features

Frequency Range: It operates in the frequency range of 1.2 GHz to 1.4 GHz, making it suitable for various RF power amplifier applications in this frequency range.
High Power Output: It is capable of delivering high output power, typically in the range of 800-900 Watts.
High Efficiency: The GaN HEMT technology used in the CGHV14800F offers high efficiency, enabling power amplifiers to achieve high power output with minimal power dissipation.
High Gain: The transistor provides high gain, allowing for efficient amplification of RF signals.
Wide Bandwidth: It has a wide bandwidth, enabling it to handle a broad range of RF frequencies.
Robust and Reliable: It is designed to operate reliably under high-power and high-temperature conditions, ensuring long-term performance and durability.

Application

The CGHV14800F is commonly used in various RF power amplifier applications, including wireless communication systems, radar systems, satellite communications, industrial heating applications, and other high-power RF applications. It is particularly suitable for applications that require high power, high efficiency, and wide bandwidth.

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsRF FETs, MOSFETs	Series	GaN
Technology	HEMT	Frequency	1.4GHz
Gain	14.5dB	Voltage - Test	50 V
Current Rating (Amps)	24A	Noise Figure	-
Current - Test	800 mA	Power - Output	900W
Voltage - Rated	125 V	Base Product Number	CGHV14800
Product Category	RF JFET Transistors	Transistor Type	HEMT
Operating Frequency	1.2 GHz to 1.4 GHz	Transistor Polarity	N-Channel
Vds - Drain-Source Breakdown Voltage	150 V	Vgs - Gate-Source Breakdown Voltage	- 10 V to 2 V
Id - Continuous Drain Current	24 A	Output Power	800 W
Maximum Drain Gate Voltage	-	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 100 C	Pd - Power Dissipation	-
Mounting Style	Screw Mount	Development Kit	CGHV14800F-TB
Forward Transconductance - Min	-	Operating Temperature Range	- 40 C to + 100 C
Product Type	RF JFET Transistors	Factory Pack Quantity	1
Subcategory	Transistors	Vgs th - Gate-Source Threshold Voltage	- 3.8 V
Unit Weight	2.504187 oz