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FJA4313OTU +BOM

NPN Epitaxial Silicon Transistor

Key Features

  • High Current Capability: IC = 15 A
  • High Power Dissipation : 130 watts
  • High Frequency : 30 MHz
  • High Voltage : VCEO = 250 V
  • Wide S.O.A for reliable operation
  • Excellent Gain Linearity for low THD
  • Complement to 2SA1962/FJA4213
  • Thermal and electrical Spice models are available

Application

  • Perfect for any situation.
  • Can be used for multiple needs.
  • Highly adaptable and reliable.

Specifications

Product Category Bipolar Transistors - BJT Mounting Style Through Hole
Transistor Polarity NPN Configuration Single
Collector- Emitter Voltage VCEO Max 250 V Collector- Base Voltage VCBO 250 V
Emitter- Base Voltage VEBO 5 V Collector-Emitter Saturation Voltage 400 mV
Maximum DC Collector Current 17 A Pd - Power Dissipation 130 W
Gain Bandwidth Product fT 30 MHz Minimum Operating Temperature - 50 C
Maximum Operating Temperature + 150 C Series FJA4313
Continuous Collector Current 15 A DC Collector/Base Gain hfe Min 55
DC Current Gain hFE Max 160 Height 18.9 mm
Length 15.8 mm Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 30 Subcategory Transistors
Technology Si Width 5 mm
Part # Aliases FJA4313OTU_NL Unit Weight 0.225789 oz

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