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See Technical Specifications

FJP5555TU +BOM

NPN Silicon Transistor

Manufacturer:

onsemi
Mfr.Part #:

FJP5555TU
Datasheet:

FJP5555TU Datasheet (PDF)
REACH:

Details
Mounting Style:

Through Hole
Transistor Polarity:

NPN
Configuration:

Single
EDA/CAD Models:

Request Free CAD Models for FJP5555TU

FJP5555TU General Description

The FJP5555 is a 1050 V 5 A NPN Silicon Epitaxial Planar Transistor. The FJP5555 is designed for high speed switching applications which utilizes the industry standard TO-220 package offering flexibility in design and excellent Power Dissipation.

Key Features

High-Voltage Capability
High Switching Speed
Wide Safe Operating Area

Application

This product is general usage and suitable for many different applications.

Specifications

Product Category	Bipolar Transistors - BJT	REACH	Details
Mounting Style	Through Hole	Transistor Polarity	NPN
Configuration	Single	Collector- Emitter Voltage VCEO Max	400 V
Collector- Base Voltage VCBO	1.05 kV	Emitter- Base Voltage VEBO	14 V
Collector-Emitter Saturation Voltage	1.5 V	Maximum DC Collector Current	5 A
Pd - Power Dissipation	75 W	Gain Bandwidth Product fT	-
Minimum Operating Temperature	-	Maximum Operating Temperature	+ 150 C
Series	FJP5555	Continuous Collector Current	5 A
DC Collector/Base Gain hfe Min	20	DC Current Gain hFE Max	40
Height	9.4 mm	Length	10.1 mm
Product Type	BJTs - Bipolar Transistors	Factory Pack Quantity	50
Subcategory	Transistors	Technology	Si
Width	4.7 mm	Part # Aliases	FJP5555TU_NL
Unit Weight	0.063493 oz