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Bipolar (BJT) Transistor NPN 400 V 4 A 4MHz 75 W Through Hole TO-220-3
TO-220-3Manufacturer:
onsemi
Mfr.Part #:
FJP3305
Datasheet:
Mounting Style:
Through Hole
Transistor Polarity:
NPN
Configuration:
Single
Collector- Emitter Voltage VCEO Max:
400 V
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Bipolar (BJT) Transistor NPN 400 V 4 A 4MHz 75 W Through Hole TO-220-3
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 400 V | Collector- Base Voltage VCBO | 700 V |
Emitter- Base Voltage VEBO | 9 V | Maximum DC Collector Current | 4 A |
Pd - Power Dissipation | 75 W | Gain Bandwidth Product fT | 4 MHz |
Minimum Operating Temperature | - 65 C | Maximum Operating Temperature | + 150 C |
DC Collector/Base Gain hfe Min | 19 | Height | 9.4 mm |
Length | 10.1 mm | Product Type | BJTs - Bipolar Transistors |
Factory Pack Quantity | 1200 | Subcategory | Transistors |
Technology | Si | Width | 4.7 mm |
Part # Aliases | FJP3305_NL | Unit Weight | 0.080072 oz |
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