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FJAF4310OTU +BOM

NPN Epitaxial Silicon Transistor

Key Features

  • Audio Power Amplifier
  • High Current Capability : IC=10A
  • High Power Dissipation
  • Wide S.O.A
  • Complement to FJAF4210

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT REACH Details
Mounting Style Through Hole Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 140 V
Collector- Base Voltage VCBO 200 V Emitter- Base Voltage VEBO 6 V
Collector-Emitter Saturation Voltage 500 mV Maximum DC Collector Current 10 A
Pd - Power Dissipation 80 W Gain Bandwidth Product fT 30 MHz
Minimum Operating Temperature - Maximum Operating Temperature + 150 C
Series FJAF4310 Continuous Collector Current 10 A
DC Collector/Base Gain hfe Min 50 DC Current Gain hFE Max 180
Height 16.7 mm Length 15.7 mm
Product Type BJTs - Bipolar Transistors Factory Pack Quantity 30
Subcategory Transistors Technology Si
Width 5.7 mm Part # Aliases FJAF4310OTU_NL
Unit Weight 0.245577 oz

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AVAQ determines and packages all devices based on electrostatic discharge (ESD) and moisture sensitivity level (MSL) protection requirements.

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In Stock: 9,256

Minimum Order: 1

Qty. Unit Price Ext. Price
1+ $1.942 $1.94
200+ $0.751 $150.20
360+ $0.725 $261.00
1080+ $0.713 $770.04

The prices below are for reference only.

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