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FJP13007H1TU-F080 +BOM

NPN Silicon Transistor

Key Features

  • High Voltage Capability
  • High Speed Switching
  • Suitable for Electronic Ballast and Switching Regulator

Application

  • This product is general usage and suitable for many different applications.

Specifications

Product Category Bipolar Transistors - BJT REACH Details
Mounting Style Through Hole Transistor Polarity NPN
Configuration Single Collector- Emitter Voltage VCEO Max 400 V
Collector- Base Voltage VCBO 700 V Emitter- Base Voltage VEBO 9 V
Collector-Emitter Saturation Voltage 3 V Maximum DC Collector Current 8 A
Pd - Power Dissipation 80 W Gain Bandwidth Product fT 4 MHz
Minimum Operating Temperature - Maximum Operating Temperature + 150 C
Series FJP13007 DC Collector/Base Gain hfe Min 8 at 2 A, 5 V
DC Current Gain hFE Max 60 at 2 A, 5 V Product Type BJTs - Bipolar Transistors
Factory Pack Quantity 1000 Subcategory Transistors
Technology Si Part # Aliases FJP13007H1TU_F080
Unit Weight 0.063493 oz

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