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FJPF5027RTU +BOM
Bipolar (BJT) Transistor NPN 800 V 3 A 15MHz 40 W Through Hole TO-220F-3
TO-220F-3-
Manufacturer:
onsemi
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Mfr.Part #:
FJPF5027RTU
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Datasheet:
-
Mounting Style:
Through Hole
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Transistor Polarity:
NPN
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Configuration:
Single
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Collector- Emitter Voltage VCEO Max:
800 V
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EDA/CAD Models:
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Availability: 7072 PCS
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FJPF5027RTU General Description
Bipolar (BJT) Transistor NPN 800 V 3 A 15MHz 40 W Through Hole TO-220F-3
Key Features
- High Speed Switching
- Wide SOA
Application
- This product is general usage and suitable for many different applications.
Specifications
Product Category | Bipolar Transistors - BJT | Mounting Style | Through Hole |
Transistor Polarity | NPN | Configuration | Single |
Collector- Emitter Voltage VCEO Max | 800 V | Collector- Base Voltage VCBO | 1.1 kV |
Emitter- Base Voltage VEBO | 7 V | Collector-Emitter Saturation Voltage | 2 V |
Maximum DC Collector Current | 3 A | Pd - Power Dissipation | 40 W |
Gain Bandwidth Product fT | 15 MHz | Minimum Operating Temperature | - |
Maximum Operating Temperature | + 150 C | Series | FJPF5027 |
Continuous Collector Current | 5 A | DC Collector/Base Gain hfe Min | 15 |
Height | 9.19 mm | Length | 10.16 mm |
Product Type | BJTs - Bipolar Transistors | Factory Pack Quantity | 50 |
Subcategory | Transistors | Technology | Si |
Width | 4.7 mm | Part # Aliases | FJPF5027RTU_NL |
Unit Weight | 0.080072 oz |
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In Stock: 7,072
Minimum Order: 1
Qty. | Unit Price | Ext. Price |
---|---|---|
1+ | - | - |
The prices below are for reference only.
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