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IGB30N60TATMA1 +BOM

IGBT Trench 600 V 60 A 187 W Surface Mount PG-TO263-3-2

IGB30N60TATMA1 General Description

IGBT Trench 600 V 60 A 187 W Surface Mount PG-TO263-3-2

Infineon Technologies Corporation Inventory

Key Features

  • Lowest V
  • CEsat
  • Low switching losses
  • Easy parallel switching capability due to positive temperature coefficient in V
  • CEsat
  • Very soft, fast recovery anti-parallel Emitter Controlled Diode
  • High ruggedness, temperature stable behavior
  • Low EMI emissions
  • Low gate charge
  • Very tight parameter distribution
  • Highest efficiency – low conduction and switching losses
  • Comprehensive portfolio in 600 V and 1200 V for flexibility of design
  • High device reliability
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop®
IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 600 V
Current - Collector (Ic) (Max) 60 A Current - Collector Pulsed (Icm) 90 A
Vce(on) (Max) @ Vge, Ic 2.05V @ 15V, 30A Power - Max 187 W
Switching Energy 1.46mJ Input Type Standard
Gate Charge 167 nC Td (on/off) @ 25°C 23ns/254ns
Test Condition 400V, 30A, 10.6Ohm, 15V Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Surface Mount Base Product Number IGB30
RHoS yes PBFree yes
HalogenFree yes Product Category IGBT Transistors
Technology Si Maximum Gate Emitter Voltage - 20 V, 20 V
Product Type IGBT Transistors Subcategory IGBTs
Tradename TRENCHSTOP Part # Aliases IGB30N60T SP000095765

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IGB30N60TATMA1 Datasheet PDF

Preliminary Specification IGB30N60TATMA1 PDF Download

IGB30N60TATMA1 PDF Preview

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