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IGLD60R070D1AUMA1 +BOM

IGLD60R070D1: 600 V 15A CoolGaN Enhancement-Mode Power Transistor - PG-LSON-8-1

Manufacturer:

Infineon Technologies Corporation
Mfr.Part #:

IGLD60R070D1AUMA1
Datasheet:

IGLD60R070D1AUMA1 Datasheet (PDF)
Series:

CoolGaN™
FET Type:

N-Channel
Technology:

GaNFET (Gallium Nitride)
Drain To Source Voltage (Vdss):

600 V
EDA/CAD Models:

Request Free CAD Models for IGLD60R070D1AUMA1

IGLD60R070D1AUMA1 General Description

The IGLD60R070D1AUMA1's compact design makes it a versatile option for applications where space is limited. Whether used in motor drives, power supplies, or renewable energy systems, this module delivers high performance and optimal switching performance. Its rugged construction ensures that it can withstand harsh operating conditions, while its high efficiency helps to reduce power losses and improve overall system performance

Infineon Technologies Corporation Inventory

Infineon Technologies Corporation Original Stock

Specifications

Category	Discrete Semiconductor ProductsTransistorsFETs, MOSFETsSingle FETs, MOSFETs	Series	CoolGaN™
FET Type	N-Channel	Technology	GaNFET (Gallium Nitride)
Drain to Source Voltage (Vdss)	600 V	Current - Continuous Drain (Id) @ 25°C	15A (Tc)
Drive Voltage (Max Rds On, Min Rds On)	-	Rds On (Max) @ Id, Vgs	-
Vgs(th) (Max) @ Id	1.6V @ 2.6mA	Vgs (Max)	-10V
Input Capacitance (Ciss) (Max) @ Vds	380 pF @ 400 V	FET Feature	-
Power Dissipation (Max)	114W (Tc)	Operating Temperature	-55°C ~ 150°C (TJ)
Mounting Type	Surface Mount	Base Product Number	IGLD60
feature-material	GaN	feature-channel-type	N
feature-configuration	Single Quad Drain Triple Source	feature-maximum-drain-source-voltage-v	600
feature-maximum-gate-source-voltage-v	-10(Min)	feature-maximum-continuous-drain-current-ma	15000
feature-maximum-power-dissipation-mw	114000	feature-packaging	Tape and Reel
feature-pin-count	8	feature-cecc-qualified
feature-esd-protection		feature-military	No
feature-aec-qualified	No	feature-auto-motive	No
feature-p-pap	No	feature-eccn-code	EAR99
feature-svhc	Yes	feature-svhc-exceeds-threshold	Yes