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IGZ100N65H5XKSA1 +BOM

IGBT Trench 650 V 161 A 536 W Through Hole PG-TO247-4

IGZ100N65H5XKSA1 General Description

IGBT Trench 650 V 161 A 536 W Through Hole PG-TO247-4

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Key Features

  • Extremely low control inductance loop
  • Emitter pin for driver feedback
  • Same creepage distance of collector emitter as standard TO-247 package
  • 20% reduction in total switching losses compared to TO-247 package using same technology
  • System efficiency improvement compared to standard TO-247
  • Benefit increase at high current conditions
  • IGBTs operates under lower junction temperature
  • Much less power dissipation under overcurrent conditions
Infineon Technologies Corporation Original Stock

Specifications

Category Discrete Semiconductor ProductsTransistorsIGBTsSingle IGBTs Series TrenchStop™ 5
IGBT Type Trench Voltage - Collector Emitter Breakdown (Max) 650 V
Current - Collector (Ic) (Max) 161 A Current - Collector Pulsed (Icm) 400 A
Vce(on) (Max) @ Vge, Ic 2.1V @ 15V, 100A Power - Max 536 W
Switching Energy 850µJ (on), 770µJ (off) Input Type Standard
Gate Charge 210 nC Td (on/off) @ 25°C 30ns/421ns
Test Condition 400V, 50A, 8Ohm, 15V Operating Temperature -40°C ~ 175°C (TJ)
Mounting Type Through Hole Base Product Number IGZ100
RHoS yes PBFree yes
HalogenFree yes

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IGZ100N65H5XKSA1 Datasheet PDF

Preliminary Specification IGZ100N65H5XKSA1 PDF Download

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