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High-performance power mosfet for demanding application
TO-247-3Manufacturer:
Mfr.Part #:
IMW65R083M1HXKSA1
Datasheet:
Technology:
SiC
Mounting Style:
Through Hole
Transistor Polarity:
N-Channel
Number Of Channels:
1 Channel
EDA/CAD Models:
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N-Channel 650 V 24A (Tc) 104W (Tc) Through Hole PG-TO247-3-41
Product Category | MOSFET | Technology | SiC |
Mounting Style | Through Hole | Transistor Polarity | N-Channel |
Number of Channels | 1 Channel | Vds - Drain-Source Breakdown Voltage | 650 V |
Id - Continuous Drain Current | 24 A | Rds On - Drain-Source Resistance | 111 mOhms |
Vgs - Gate-Source Voltage | - 5 V, + 23 V | Vgs th - Gate-Source Threshold Voltage | 5.7 V |
Qg - Gate Charge | 19 nC | Minimum Operating Temperature | - 55 C |
Maximum Operating Temperature | + 175 C | Pd - Power Dissipation | 104 W |
Channel Mode | Enhancement | Product Type | MOSFET |
Factory Pack Quantity | 240 | Subcategory | MOSFETs |
Part # Aliases | IMW65R083M1H SP005423802 |
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