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See Technical Specifications

NAND01GW3B2BN6F +BOM

The NAND01GW3B2BN6F is a NAND flash memory chip designed for applications requiring fast data access

Manufacturer:

Micron Technology
Mfr.Part #:

NAND01GW3B2BN6F
Datasheet:

NAND01GW3B2BN6F Datasheet (PDF)
Memory Size:

1 Gbit
Interface Type:

Parallel
Organization:

128 M x 8
Timing Type:

Asynchronous
EDA/CAD Models:

Request Free CAD Models for NAND01GW3B2BN6F

NAND01GW3B2BN6F General Description

The technical specifications embedded in the part number of the NAND01GW3B2BN6F highlight the attention to detail and precision in its design. From interface type to package configuration, every aspect is carefully considered to meet the demands of today's digital landscape. With its electrically erasable programmable read-only memory technology, this chip offers fast read and write operations, enhancing the overall user experience of electronic devices

Key Features

High-performance and reliability
with high-speed and high-capacity storage
Supports 3.0V read-write
Suitable for industrial control, automotive and other industries

Application

Enhancing NAND stability
Advanced software development
Utilizing simulation for efficiency

Specifications

Product Category	NAND Flash	Memory Size	1 Gbit
Interface Type	Parallel	Organization	128 M x 8
Timing Type	Asynchronous	Data Bus Width	8 bit, 16 bit
Supply Voltage - Min	2.7 V	Supply Voltage - Max	3.6 V
Supply Current - Max	20 mA	Minimum Operating Temperature	- 40 C
Maximum Operating Temperature	+ 85 C	Active Read Current - Max	20 mA
Architecture	Sectored	Memory Type	NAND
Product	NAND Flash	Product Type	NAND Flash
Speed	25 ns	Standard	Not Supported
Subcategory	Memory & Data Storage	Type	No Boot Block