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See Technical Specifications

NSS20501UW3T2G +BOM

Low VCE(sat) Transistor, NPN, 20 V, 5.0 A

Manufacturer:

ON Semiconductor, LLC
Mfr.Part #:

NSS20501UW3T2G
Datasheet:

NSS20501UW3T2G Datasheet (PDF)
Transistor Type:

NPN
Current - Collector (Ic) (Max):

5 A
Voltage - Collector Emitter Breakdown (Max):

20 V
Vce Saturation (Max) @ Ib, Ic:

125mV @ 400mA, 4A
EDA/CAD Models:

Request Free CAD Models for NSS20501UW3T2G

NSS20501UW3T2G General Description

Say goodbye to expensive energy control solutions with the NSS20501UW3T2G Bipolar Transistor. This miniature surface mount device features ultra-low saturation voltage V_CE(sat) and high current gain capability, making it perfect for low voltage, high speed switching applications. Whether you're working on telecommunications, industrial automation, or computer peripherals, this transistor is engineered to deliver affordable and efficient performance. With its compact size and powerful capabilities, it's the perfect choice for your next project

Key Features

High Current, Low V_CE(sat), ESD Robust, High Current Gain, High Cut Off Frequency, Low Profile Package, Linear Gain (Beta)

Application

Load Switching, Battery Charging, External Pass Transistor, DC/DC Converter, Complimentary Driver, Current Extention & Low Drop Out Regulation, Cathode Florescent Lamp drive, Peripheral Driver - LEDs, Motors, Relays

Specifications

Category	Discrete Semiconductor ProductsTransistorsBipolar (BJT)Single Bipolar Transistors	Series	-
Transistor Type	NPN	Current - Collector (Ic) (Max)	5 A
Voltage - Collector Emitter Breakdown (Max)	20 V	Vce Saturation (Max) @ Ib, Ic	125mV @ 400mA, 4A
Current - Collector Cutoff (Max)	100nA (ICBO)	DC Current Gain (hFE) (Min) @ Ic, Vce	200 @ 2A, 2V
Power - Max	875 mW	Frequency - Transition	150MHz
Operating Temperature	-55°C ~ 150°C (TJ)	Mounting Type	Surface Mount
Base Product Number	NSS20501